IRL2310 |
RFQ for IRL2310 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| IRL2310 | - | TO-220 | 05+ |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, V GS @ 5.0V | 40 | A |
| ID @ TC = 100°C | Continuous Drain Current, V GS @ 5.0V | 29 | A |
| IDM | Pulsed Drain Current | 160 | A |
| PD @TC = 25°C | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 24 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
| Models | MFG | Pack |
| IRL2203NS | TO-263 | |
| IRL2203NSPBF | ||
| IRL2203NSTRL | ||
| IRL2203NSTRLPBF | ||
| IRL2203NSTRR | ||
| IRL2203PBF | ||
| IRL2203S | TO-263 | |
| IRL2310 | TO-220 | |
| IRL2402TR | ||
| IRL2505 | ||
| IRL2505L | TO-262 | |
| IRL2505PBF | ||
| IRL2505S | TO-263 | |
| IRL1004 | TO-220 | |
| IRL1004L | TO-262 | |
| IRL1004S | 2004+ | |
| IRL1104 | TO-220AB | |
| IRL1104L | TO-262 | |
| IRL3705L | ||
| IRL3705N | 2004+ |
